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Discontinued
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PhotoMOS GE 1 Form A & 1 Form B


Both N.O. and N.C. contacts incorporated in a compact DIP8-pin high insulation

RoHS規格 UL Recognaized VDE TRIANGLE MARK

UL , VDE Approved

Please refer to "the latest product specifications" when designing your product.
Please refer to "Cautions For Use" in the catalog, and "Related Information" on our website.

Features

1.60V type couples high capacity (0.5A) with low on-resistance (Typ. 1Ω)

2.High I/O isolation voltage of 5,000 V

3.Approx. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B PhotoMOS

4.Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use

5.Controls low-level analog signals

6.High sensitivity and high speed responses

7.Low-level off-state leakage current

Typical Applications

1.Power supply

2.Measuring instruments

3.Security equipment

4.Modem

5.Telephone equipment

6.Electricity, plant equipment

7.Sensing equipment


Note: Please contact our sales representative for automotive applications of PhotoMOS.

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