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PhotoMOS CC TSON 1 Form B

Lineup
- PhotoMOS CC TSON 1 Form B Normally closed, ultra-miniature TSON type using capacitive isolation technology
- PhotoMOS CC TSON Low CxR Super miniature TSON package, Capacitor Coupled isolation
- PhotoMOS GE 1 Form A (DIP4-pin type) DIP4-pin type with high insulation
- PhotoMOS GE 1 Form A (DIP6-pin type) DIP6-pin type, high insulation available
- PhotoMOS GE 1 Form A & 1 Form B Both N.O. and N.C. contacts incorporated in a compact DIP8-pin high insulation
- PhotoMOS GE 1 Form B (DIP4-pin type) Normally closed type with high insulation
- PhotoMOS GE 1 Form B (DIP6-pin type) Normally closed type with high insulation
- PhotoMOS GE 2 Form A DIP8-pin type with high insulation
- PhotoMOS GE 2 Form B Normally closed type with high insulation
- PhotoMOS GU 1 Form A (DIP6-pin type) 6-pin type for switching low-level analog signal
- PhotoMOS GU 1 Form A Current Limiting DIP4-pin type with current limiting and high insulation
- PhotoMOS GU 1 Form A High Capacity 4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V
- PhotoMOS GU 1 Form A & 1 Form B Both N.O. and N.C. contacts incorporated in a DIP8-pin package
- PhotoMOS GU 1 Form B (6-pin type) Normally closed 6-pin type of 400V load voltage
- PhotoMOS GU 2 Form A Compact DIP8-pin type of 60V to 600V load voltage
- PhotoMOS GU 2 Form B Normally closed DIP8-pin type of 400V load voltage
- PhotoMOS GU 1 Form A Short Circuit Protection Short circuit protection (Non-latch type) only for DC load
- PhotoMOS GU SOP 1 Form A (4-pin) Miniature SOP4-pin type of 60 V/100 V/350 V/400 V load voltage
- PhotoMOS GU SOP 1 Form A (SOP6-pin type) Miniature SOP6-pin type of 60 to 600V load voltage
- PhotoMOS GU SOP 1 Form A Current Limiting Miniature SOP4-pin type with current limiting
- PhotoMOS GU SOP 1 Form A High Capacity (SOP4-pin type) Miniature SOP4-pin type with high capacity up to Max. 1.6 A in the series
- PhotoMOS GU SOP 1 Form A High Capacity (SOP4-pin type) Low on-resistance Low on-resistance, Miniature (SOP 4-pin), 200 V load voltage
- PhotoMOS GU SOP 1 Form A High Capacity Voltage-sensitive Space-saving SOP4-pin high capacity type with built-in input registor
- PhotoMOS GU SOP 1 Form A Short Circuit Protection Small SOP4-pin type with short circuit protecting (Latch type)
- PhotoMOS GU SOP 1 Form A & 1 Form B Both N.O. and N.C. contacts incorporated in a small SOP8-pin package
- PhotoMOS GU SOP 1 Form B (SOP4-pin type) Normally closed SOP4-pin type of 60V/350V/400V load voltage
- PhotoMOS GU SOP 1 Form B (SOP6-pin type) Normally closed SOP6-pin type of 400V load voltage
- PhotoMOS GU SOP 2 Form A Miniature SOP8-pin type of 60V/350V/400V load voltage
- PhotoMOS GU SOP 2 Form B Normally closed SOP8-pin type of 400V load voltage
- PhotoMOS HE 1 Form A DIP6 (5-pin) Ideal for industrial battery monitoring system (BMS)
- PhotoMOS HE 1 Form A (DIP6-pin type) DIP6-pin type with low on-resistance and high insulation
- PhotoMOS HE 1 Form A High Capacity Capable of Max. 3.5A high capacity load current control in the series
- PhotoMOS HE 1 Form A High Capacity (DIP6-pin type) Capable of Max. 3.5 A high capacity load current control in the series
- PhotoMOS HE 1 Form B Normally closed DIP6-pin type Low on-resistance
- PhotoMOS HE 1 Form A & 1 Form B Both 1 Form A and 1 Form B contacts incorporated in a compact DIP8-pin with low on-resistance
- PhotoMOS HE 2 Form A DIP8-pin type featuring low on-resistance with 400V load voltage
- PhotoMOS HE 2 Form B Normally closed (2 Form B) DIP6-pin type Low on-resistance with 400V load voltage
- PhotoMOS HE SOP 1 Form A High Capacity Miniature SOP6-pin type with high capacity up to Max. 3.3A in the series
- PhotoMOS HE SOP 1 Form A High Capacity (SOP6-pin type) Miniature SOP6-pin type with high capacity up to Max. 3 A in the series
- PhotoMOS HF 1 Form A DIP6-pin type with wide variation Low on-resistance
- PhotoMOS HF 1 Form A High Capacity DIP6-pin type with 1,200 V load voltage and low on resistance (Typ. 1.0 Ω)
- PhotoMOS HF SSOP 1 Form A High Capacity Miniature SSOP package with load voltage of 600 V
- PhotoMOS HS 1 Form A DIP6-pin type featuring high sensitivity
- PhotoMOS HS SOP 1 Form A Recommended LED forward current 2 mA, High Sensitivity (Low current-consumption)
  Miniature SOP4-pin Type
- PhotoMOS PD 1 Form A Flat Power-DIP4-pin type with high capacity up to Max. 2 A in the series.
- PhotoMOS Power 1 Form A Slim type with high capacity up to 4A DC load type in the series
- PhotoMOS Power 1 Form A High Capacity High capacity up to Max. 6A in the series with a slim SIL package
- PhotoMOS Power 1 Form A DC High Capacity High capacity up to Max. DC10A in the series with a slim SIL package
- PhotoMOS Power 1 Form A Voltage-sensitive Slim and high capacity up to 3.6 A Voltage-driven type in the series
- PhotoMOS Power 1 Form B Normally closed type in a slim SIL package Load voltage 400V
- PhotoMOS RF SON 1 Form A CxR5 Micro-miniature SON package CxR5: 25V load voltage
- PhotoMOS RF SON 1 Form A CxR10 Micro-miniature SON package CxR10: 40V load voltage
- PhotoMOS RF SOP 1 Form A Low CxR Miniature SOP4-pin type Low CxR 60V/80V load voltage
- PhotoMOS RF SOP 1 Form A CxR10 Miniature SOP4-pin CxR10 40V load voltage
- PhotoMOS RF 1 Form A Low on-resistance DIP6-pin type featuring low on-resistance 200V/400V load voltage
- PhotoMOS RF 2 Form A Low on-resistance DIP8-pin type featuring low on-resistance 200V/400V load voltage
- PhotoMOS RF SOP 1 Form A Low on-resistance Miniature SOP6-pin type Low on-resistance 200V/400V load voltage
- PhotoMOS RF SOP 2 Form A Low on-resistance Miniature SOP8-pin type Low on-resistance 200V load voltage
- PhotoMOS RF SOP 2 Form A Low CxR Miniature SOP8-pin type Low CxR High load voltage of 250V
- PhotoMOS RF SOP 4 Form A Low CxR Space-saving SOP16-pin type Low on-resistance 80V load voltage
- PhotoMOS RF SOP 4 Form A CxR10 Space-saving CxR type 4 channels in a SOP16-pin package
- PhotoMOS RF SOP 4 Form A CxR10 Voltage-sensitive Space-saving 4-channel type Built-in input resistor
- PhotoMOS RF SSOP 1 Form A Low CxR Low CxR type SSOP package 60 V, 80 V and 100 V load voltage
- PhotoMOS RF SSOP 1 Form A CxR3 CxR3 type, SSOP package, 20 V load voltage
- PhotoMOS RF SSOP 1 Form A CxR5 Miniature SSOP CxR5: 25 V load voltage
- PhotoMOS RF SSOP 1 Form A CxR10 Miniature SSOP CxR10: 30 V/40 V load voltage
- PhotoMOS RF SSOP CxR10 Voltage-sensitive Space-saving SSOP 1 Form A type with built-in resistor 40 V load voltage
- PhotoMOS RF VSSOP 1 Form A Low CxR Low CxR type VSSOP package 60 V and 100 V load voltage
- PhotoMOS RF VSSOP 1 Form A CxR3 CxR3 type, VSSOP package, 20 V load voltage
- PhotoMOS RF VSSOP 1 Form A CxR5 4.6 mm² mounting area CxR5: 25 V load voltage
- PhotoMOS RF VSSOP 1 Form A CxR10 4.6 mm² mounting area CxR10: 30 V/40 V load voltage
- Photovoltaic MOSFET Driver Photovoltaic MOSFET drivers of wide variation
- Photovoltaic MOSFET driver high power type MOSFET drivers for high-speed operation and low on-resistance
CAD data　 Catalogs/Datasheets　　
FAQ

Basic Information

Part Number

Rating/Performance

Dimensions

RATING

■ Absolute maximum ratings (Ambient temperature: 25°C)

Item		Symbol	AQY4C2P	Remarks
Input	Input voltage	V_IN	5.5 V
	Input reverse voltage	V_RIN	0.2 V
	Power dissipation	P_in	1.2 mW
Output	Load voltage (Peak AC)	V_L	60 V
	Continuous load current	I_L	0.15 A	Peak AC, DC
	Peak load current	I_peak	0.4 A	100 ms (1 shot), V_L = DC
	Power dissipation	P_out	250 mW
Total power dissipation		P_T	250 mW
I/O isolation voltage		V_iso	200 Vrms
Ambient temperature (Operating)		T_opr	-40～+105°C	(Avoid icing and condensation)
Ambient temperature (Storage)		T_stg	-40～+125°C

■ Electrical characteristics (Ambient temperature: 25°C)

Item			Symbol	AQY4C2P	Condition
Input	Operate (OFF) voltage	Typical	V_Foff	1.6 V	I_L = Max.
	Operate (OFF) voltage	Maximum	V_Foff	2.5 V
	Reverse (ON) voltage	Minimum	V_Fon	0.5 V
	Reverse (ON) voltage	Typical	V_Fon	1.4 V
	Input current	Typical	I_IN	0.04 mA	V_IN = 3.3 V
		Maximum		0.1 mA	V_IN = 3.3 V
		Typical		0.09 mA	V_IN = 5 V
		Maximum		0.2 mA	V_IN = 5 V
Output	On resistance	Typical	R_on	4 Ω	V_IN = 0 V, I_L = Max. Within 1 s
	On resistance	Maximum	R_on	8 Ω	V_IN = 0 V, I_L = Max. Within 1 s
	Off state leakage current	Maximum	I_Leak	10 nA	V_IN = 3.3 V, V_L = Max.
Transfer characteristics	Operate (OFF) time *	Typical	T_off	0.11 ms	V_IN = 0 V → 3.3 V V_L = 10 V R_L = 100 Ω
		Maximum		1.0 ms	V_IN = 0 V → 3.3 V V_L = 10 V R_L = 100 Ω
		Typical		0.06 ms	V_IN = 0 V → 5 V V_L = 10 V R_L = 100 Ω
		Maximum		0.5 ms	V_IN = 0 V → 5 V V_L = 10 V R_L = 100 Ω
	Reverse (ON) time *	Typical	T_on	0.3 ms	V_IN = 3.3 V → 0 V V_L = 10 V R_L = 100 Ω
		Maximum		1.5 ms	V_IN = 3.3 V → 0 V V_L = 10 V R_L = 100 Ω
		Typical		0.5 ms	V_IN = 5 V → 0 V V_L = 10 V R_L = 100 Ω
		Maximum		1.5 ms	V_IN = 5 V → 0 V V_L = 10 V R_L = 100 Ω
	I/O capacitance	Typical	C_iso	1.2 pF	f = 1 MHz, V_B = 0 V
	I/O capacitance	Maximum	C_iso	3 pF	f = 1 MHz, V_B = 0 V

*	Operate/Reverse time

■ Recommended operating conditions (Ambient temperature: 25°C)

Please use under recommended operating conditions to obtain expected performance. Additionally, please check the other conditions in this specification because they are affected by the actual usage. The expected performance may not be obtained due to the influence of the output waveform.
Please refer to “PhotoMOS Cautions for USE”.