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PhotoMOS GE 1 Form A & 1 Form B


Both N.O. and N.C. contacts incorporated in a compact DIP8-pin Reinforced insulation

RoHS規格 UL C-UL Recognaized VDE HOUSE MARK BSI

UL/C-UL , VDE , BSI Approved
A standard acquisition situation changes with part number.

Please refer to "the latest product specifications" when designing your product.
Please refer to "Cautions For Use" in the catalog, and "Related Information" on our website.

Features

1.60V type couples high capacity (0.5A) with low on-resistance (Typ. 1Ω)

2.Reinforced insulation 5,000V

3.Approx. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B PhotoMOS

4.Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use

5.Controls low-level analog signals

6.High sensitivity and high speed responses

7.Low-level off-state leakage current

Typical Applications

1.Power supply

2.Measuring instruments

3.Security equipment

4.Modem

5.Telephone equipment

6.Electricity, plant equipment

7.Sensing equipment


Note: Please contact our sales representative for automotive applications of PhotoMOS.

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