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PhotoMOS GE 1 Form B (DIP4-pin type)


Normally closed type with reinforced insulation

Through hole terminal type
Surface mount terminal type
RoHS規格 UL C-UL Recognaized VDE HOUSE MARK BSI

UL/C-UL , VDE , BSI Approved
A standard acquisition situation changes with part number.

Please refer to "the latest product specifications" when designing your product.
Please refer to "Cautions For Use" in the catalog, and "Related Information" on our website.

Features

1.1 Form B output type

2.Low on-resistance

3.Reinforced insulation of 5,000 V (reinforced insulation)

4.Controls low-level analog signals

5.High sensitivity and low on-resistance

Can control max. 0.55 A load current with 5 mA input current.
Low on-resistance of Typ.1Ω (AQY412EH).

6.Low-level off-state leakage current

Typical Applications

1.Power supply

2.Measuring equipment

3.Security equipment

4.Modem

5.Telephone equipment

6.Electricity, plant equipment

7.Sensing equipment

Note: Please contact our sales representative for automotive applications of PhotoMOS.

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