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PhotoMOS GE 1 Form B (DIP4-pin type)


■ Absolute maximum ratings (Ambient temperature: 25°C)

Item Symbol AQY412EH(A) AQY410EH(A) AQY414EH(A) Remarks
Input LED forward current IF 50mA
LED reverse voltage VR 5V
Peak forward current IFP 1A f=100Hz, Duty Ratio=0.1%
Power dissipation Pin 75mW
Output Load voltage
(peak AC)
VL 60V 350V 400V
Continuous load current IL 0.55A 0.13A 0.12A Peak AC, DC
Peak load current Ipeak 1.5A 0.4A 0.3A 100ms(1 shot), VL=DC
Power dissipation Pout 500mW
Total power dissipation PT 550mW
I/O isolation voltage Viso 5,000Vrms
Ambient temperature (Operating) Topr -40 to +85°C (Avoid icing and condensation)
Ambient temperature (Storage) Tstg -40 to +100°C
Junction temperature Tj 125°C

■ Electrical characteristics (Ambient temperature: 25°C)

Item Symbol AQY412EH(A) AQY410EH(A) AQY414EH(A) Condition
Input LED operate (OFF) current Typical IFoff 1.4mA IL=Max.
Maximum 3.0mA
LED reverse (ON) current Minimum IFon 0.4mA
Typical 1.3mA
LED dropout voltage Typical VF 1.25V (1.14V at IF=5mA) IF=50mA
Maximum 1.5V
Output On resistance Typical Ron 1.0Ω 18Ω 26Ω IF=0mA,
IL=Max.
Within 1 s
Maximum 2.5Ω 25Ω 35Ω
Off state leakage current Maximum ILeak 10μA IF=5mA VL=Max.
Transfer characteristics Operate (OFF) time* Typical Toff 3.0ms 1.0ms 0.8ms IF=0mA→5mA IL=Max.
Maximum 10ms 3.0ms
Reverse (ON) time* Typical Ton 0.2ms 0.3ms 0.2ms IF=5mA→0mA IL=Max.
Maximum 1.0ms
I/O capacitance Typical Ciso 0.8pF f=1MHz VB=0V
Maximum 1.5pF
Initial I/O isolation resistance Minimum Riso 1,000MΩ 500V DC
*Operate/Reverse time
Operate/Reverse time

■ Recommended operating conditions (Ambient temperature: 25°C)

Please use under recommended operating conditions to obtain expected characteristics.

Item Symbol Min. Max. Unit
LED current IF 5 30 mA
AQY412EH(A) Load voltage (Peak AC) VL - 48 V
Continuous load current IL - 0.55 A
AQY410EH(A) Load voltage (Peak AC) VL - 280 V
Continuous load current IL - 0.13 A
AQY414EH(A) Load voltage (Peak AC) VL - 320 V
Continuous load current IL - 0.12 A

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