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PhotoMOS HE 1 Form A & 1 Form B

Lineup
- PhotoMOS CC TSON 1 Form B Normally closed, ultra-miniature TSON type using capacitive isolation technology
- PhotoMOS CC TSON Low CxR Super miniature TSON package, Capacitor Coupled isolation
- PhotoMOS GE 1 Form A (DIP4-pin type) DIP4-pin type with high insulation
- PhotoMOS GE 1 Form A (DIP6-pin type) DIP6-pin type, high insulation available
- PhotoMOS GE 1 Form A & 1 Form B Both N.O. and N.C. contacts incorporated in a compact DIP8-pin high insulation
- PhotoMOS GE 1 Form B (DIP4-pin type) Normally closed type with high insulation
- PhotoMOS GE 1 Form B (DIP6-pin type) Normally closed type with high insulation
- PhotoMOS GE 2 Form A DIP8-pin type with high insulation
- PhotoMOS GE 2 Form B Normally closed type with high insulation
- PhotoMOS GU 1 Form A (DIP6-pin type) 6-pin type for switching low-level analog signal
- PhotoMOS GU 1 Form A Current Limiting DIP4-pin type with current limiting and high insulation
- PhotoMOS GU 1 Form A High Capacity 4-pin high capacity of 1.1A, I/O isolation voltage of 5,000V
- PhotoMOS GU 1 Form A & 1 Form B Both N.O. and N.C. contacts incorporated in a DIP8-pin package
- PhotoMOS GU 1 Form B (6-pin type) Normally closed 6-pin type of 400V load voltage
- PhotoMOS GU 2 Form A Compact DIP8-pin type of 60V to 600V load voltage
- PhotoMOS GU 2 Form B Normally closed DIP8-pin type of 400V load voltage
- PhotoMOS GU 1 Form A Short Circuit Protection Short circuit protection (Non-latch type) only for DC load
- PhotoMOS GU SOP 1 Form A (4-pin) Miniature SOP4-pin type of 60 V/100 V/350 V/400 V load voltage
- PhotoMOS GU SOP 1 Form A (SOP6-pin type) Miniature SOP6-pin type of 60 to 600V load voltage
- PhotoMOS GU SOP 1 Form A Current Limiting Miniature SOP4-pin type with current limiting
- PhotoMOS GU SOP 1 Form A High Capacity Low on-resistance, Miniature ( SOP 4-pin ), 60 V load voltage
- PhotoMOS GU SOP 1 Form A High Capacity (SOP4-pin type) Miniature SOP4-pin type with high capacity up to Max. 1.8 A in the series
- PhotoMOS GU SOP 1 Form A High Capacity (SOP4-pin type) Low on-resistance Low on-resistance, Miniature (SOP 4-pin), 200 V load voltage
- PhotoMOS GU SOP 1 Form A Short Circuit Protection Small SOP4-pin type with short circuit protecting (Latch type)
- PhotoMOS GU SOP 1 Form A & 1 Form B Both N.O. and N.C. contacts incorporated in a small SOP8-pin package
- PhotoMOS GU SOP 1 Form B (SOP4-pin type) Normally closed SOP4-pin type of 60V/350V/400V load voltage
- PhotoMOS GU SOP 1 Form B (SOP6-pin type) Normally closed SOP6-pin type of 400V load voltage
- PhotoMOS GU SOP 2 Form A Miniature SOP8-pin type of 60V/350V/400V load voltage
- PhotoMOS GU SOP 2 Form B Normally closed SOP8-pin type of 400V load voltage
- PhotoMOS HE 1 Form A DIP6 (5-pin) Ideal for industrial battery monitoring system (BMS)
- PhotoMOS HE 1 Form A (DIP6-pin type) DIP6-pin type with low on-resistance and high insulation
- PhotoMOS HE 1 Form A High Capacity Capable of Max. 3.5A high capacity load current control in the series
- PhotoMOS HE 1 Form A High Capacity (DIP6-pin type) Capable of Max. 3.5 A high capacity load current control in the series
- PhotoMOS HE 1 Form B Normally closed DIP6-pin type Low on-resistance
- PhotoMOS HE 1 Form A & 1 Form B Both 1 Form A and 1 Form B contacts incorporated in a compact DIP8-pin with low on-resistance
- PhotoMOS HE 2 Form A DIP8-pin type featuring low on-resistance with 400V load voltage
- PhotoMOS HE 2 Form B Normally closed (2 Form B) DIP6-pin type Low on-resistance with 400V load voltage
- PhotoMOS HE SOP 1 Form A High Capacity Miniature SOP6-pin type with high capacity up to Max. 3.3A in the series
- PhotoMOS HE SOP 1 Form A High Capacity (SOP6-pin type) Miniature SOP6-pin type with high capacity up to Max. 3 A in the series
- PhotoMOS HF 1 Form A DIP6-pin type with wide variation Low on-resistance
- PhotoMOS HF 1 Form A High Capacity DIP6-pin type with 1,200 V load voltage and low on resistance (Typ. 1.0 Ω)
- PhotoMOS HF SSOP 1 Form A High Capacity Miniature SSOP package with load voltage of 600 V
- PhotoMOS HS 1 Form A DIP6-pin type featuring high sensitivity
- PhotoMOS HS SOP 1 Form A Recommended LED forward current 2 mA, High Sensitivity (Low current-consumption)
  Miniature SOP4-pin Type
- PhotoMOS PD 1 Form A Flat Power-DIP4-pin type with high capacity up to Max. 2 A in the series.
- PhotoMOS Power 1 Form A Slim type with high capacity up to 4A DC load type in the series
- PhotoMOS Power 1 Form A High Capacity High capacity up to Max. 6A in the series with a slim SIL package
- PhotoMOS Power 1 Form A DC High Capacity High capacity up to Max. DC10A in the series with a slim SIL package
- PhotoMOS Power 1 Form A Voltage-sensitive Slim and high capacity up to 3.6 A Voltage-driven type in the series
- PhotoMOS Power 1 Form B Normally closed type in a slim SIL package Load voltage 400V
- PhotoMOS RF SON 1 Form A CxR5 Micro-miniature SON package CxR5: 25V load voltage
- PhotoMOS RF SON 1 Form A CxR10 Micro-miniature SON package CxR10: 40V load voltage
- PhotoMOS RF SOP 1 Form A Low CxR Miniature SOP4-pin type Low CxR 60V/80V load voltage
- PhotoMOS RF SOP 1 Form A CxR10 Miniature SOP4-pin CxR10 40V load voltage
- PhotoMOS RF 1 Form A Low on-resistance DIP6-pin type featuring low on-resistance 200V/400V load voltage
- PhotoMOS RF 2 Form A Low on-resistance DIP8-pin type featuring low on-resistance 200V/400V load voltage
- PhotoMOS RF SOP 1 Form A Low on-resistance Miniature SOP6-pin type Low on-resistance 200V/400V load voltage
- PhotoMOS RF SOP 2 Form A Low on-resistance Miniature SOP8-pin type Low on-resistance 200V load voltage
- PhotoMOS RF SOP 2 Form A Low CxR Miniature SOP8-pin type Low CxR High load voltage of 250V
- PhotoMOS RF SOP 4 Form A Low CxR Space-saving SOP16-pin type Low on-resistance 80V load voltage
- PhotoMOS RF SOP 4 Form A CxR10 Space-saving CxR type 4 channels in a SOP16-pin package
- PhotoMOS RF SSOP 1 Form A Low CxR Low CxR type SSOP package 60 V, 80 V and 100 V load voltage
- PhotoMOS RF SSOP 1 Form A CxR3 CxR3 type, SSOP package, 20 V load voltage
- PhotoMOS RF SSOP 1 Form A CxR5 Miniature SSOP CxR5: 25 V load voltage
- PhotoMOS RF SSOP 1 Form A CxR10 Miniature SSOP CxR10: 30 V/40 V load voltage
- PhotoMOS RF VSSOP 1 Form A Low CxR Low CxR type VSSOP package 60 V and 100 V load voltage
- PhotoMOS RF VSSOP 1 Form A CxR3 CxR3 type, VSSOP package, 20 V load voltage
- PhotoMOS RF VSSOP 1 Form A CxR5 4.6 mm² mounting area CxR5: 25 V load voltage
- PhotoMOS RF VSSOP 1 Form A CxR10 4.6 mm² mounting area CxR10: 30 V/40 V load voltage
- Photovoltaic MOSFET Driver Photovoltaic MOSFET drivers of wide variation
- Photovoltaic MOSFET driver high power type MOSFET drivers for high-speed operation and low on-resistance
CAD data　 Catalogs/Datasheets　　
FAQ

Basic Information

Part Number

Rating/Performance

Dimensions

RATING

■ Absolute maximum ratings (Ambient temperature: 25°C)

Item		Symbol	AQW654 (A)	Remarks
Input	LED forward current	I_F	50 mA
	LED reverse voltage	V_R	5 V
	Peak forward current	I_FP	1 A	f = 100 Hz, Duty Ratio = 0.1%
	Power dissipation	P_in	75 mW
Output	Load voltage (peak AC)	V_L	400 V
	Continuous load current	I_L	0.12 A(0.16 A)	Peak AC, DC ( ): in case of using only 1a or 1b, 1 channel
	Peak load current	I_peak	0.36 A	100 ms (1 shot), V_L = DC
	Power dissipation	P_out	800 mW
Total power dissipation		P_T	850 mW
I/O isolation voltage		V_iso	1,500 Vrms
Ambient temperature (Operating)		T_opr	–40 to +85°C	(Avoid icing and condensation)
Ambient temperature (Storage)		T_stg	–40 to +100°C
Junction temperature		T_j	125°C

■ Electrical characteristics (Ambient temperature: 25°C)

Item			Symbol	AQW654 (A)	Condition
Input	LED operate current	Typical	I_Fon (N.O.) I_Foff (N.C.)	0.9 mA	I_L = Max.
	LED operate current	Maximum	I_Fon (N.O.) I_Foff (N.C.)	3.0 mA	I_L = Max.
	LED reverse current	Minimum	I_Foff(N.O.) I_Fon(N.C.)	0.4 mA	I_L = Max.
	LED reverse current	Typical	I_Foff(N.O.) I_Fon(N.C.)	0.8 mA	I_L = Max.
	LED dropout voltage	Typical	V_F	1.25 V (1.14 V at I_F = 5 mA)	I_F = 50 mA
	LED dropout voltage	Maximum	V_F	1.5 V	I_F = 50 mA
Output	On resistance	Typical	R_on	11 Ω	I_F = 5 mA (N.O.) I_F = 0 mA (N.C.) I_L = Max. Within 1s
	On resistance	Maximum	R_on	16 Ω	I_F = 5 mA (N.O.) I_F = 0 mA (N.C.) I_L = Max. Within 1s
	Off state leakage current	Maximum	I_Leak	1 μA	I_F = 0 mA (N.O.) I_F = 5 mA (N.C.) V_L = Max.
Transfer characteristics	Operate time^*	Typical	T_on (N.O.) T_off (N.C.)	0.8 ms (N.O.) 1.2 ms (N.C.)	I_F = 0 mA → 5 mA I_L = Max.
	Operate time^*	Maximum	T_on (N.O.) T_off (N.C.)	2.0 ms	I_F = 0 mA → 5 mA I_L = Max.
	Reverse time^*	Typical	T_off(N.O.) T_on(N.C.)	0.04 ms (N.O.) 0.36 ms (N.C.)	I_F = 5 mA → 0 mA I_L = Max.
	Reverse time^*	Maximum	T_off(N.O.) T_on(N.C.)	1.0 ms	I_F = 5 mA → 0 mA I_L = Max.
	I/O capacitance	Typical	C_iso	0.8 pF	f = 1 MHz V_B = 0 V
	I/O capacitance	Maximum	C_iso	1.5 pF	f = 1 MHz V_B = 0 V
	Initial I/O isolation resistance	Minimum	R_iso	1,000 MΩ	500 V DC