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PhotoMOS Power 1 Form A


Slim type with high capacity up to 4A DC load type also available

PhotoMOS Power 1 Form A
RoHS規格 UL C-UL Recognaized VDE HOUSE MARK

UL/C-UL , VDE Approved

Please refer to "the latest product specifications" when designing your product.
Please refer to "Cautions For Use" in the catalog, and "Related Information" on our website.

Features

1.Slim SIL4-pin package

2.Extremely low on-resistance

3.Control low-level signal

4.Low-level off state leakage current of max. 10 μA

5.High I/O isolation voltage of 2,500 V

6.Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side

7.Eliminates the need for a power supply to drive the power MOSFET

8.No restriction on mounting direction

9.Low thermoelectromotive force

10.Neither noise nor arc at contact

11.Sockets are also available

Typical Applications

1.Traffic signals

2.Measuring instruments

3.Industrial machines

Note: Please contact our sales representative for automotive applications of PhotoMOS.

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