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> AHF2 (TiP) Switches
> Rating/Performance
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Note: | Output characteristics are the values of the applied circuit conditions, below. Also, the microcomputer input terminals actually used use the following voltages. Low level input terminal: 1.5 V or less High level input terminal: 3.5 V or higher Please use with a detection method to prevent malfunction. Refer to the “Preventing a malfunction” of “CAUTIONS FOR USE”. |
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Please set the power supply voltage (VCC) and circuit resistance (R1 and R2) to within ±5%.
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Item | Symbol | Rating | Unit | |
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Input side Infrared light emitting diode (between terminal No.1 and No.2) |
Forward Current | IF | 50 | mA |
Reverse Voltage | VR | 5 | V | |
Power Dissipation | PO | 75 | mW | |
Output side Phototransistor (between terminal No.3 and No.4) |
Collector-Emitter Voltage | VCEO | 30 | V |
Emitter-Collector Voltage | VECO | 3 | V | |
Collector Current | IC | 20 | mA | |
Collector Power Dissipation | PC | 50 | mW |
Item | Specificaitons | |
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Electrical and mechanical expected life | Min. 105 (Using the applicable circuit) | Switching frequency: 6 cpm; Opening and closing position: 0 degrees ↔ 90 degrees (The internal shpere must be stationary for at least 500 ms at angles of 0 and 90 degrees respectively.) |
Vibration resistance | 10 to 400 Hz acceleration 2.9 m/s2 applied for 7 days | |
5 to 10 Hz at single amplitude of 5 mm, 5×105 cycles | ||
Shock resistance | 588 m/s2 applied 3 times in each of 6 directions | |
Terminal strength | Min. 9.8 N (each direction) | Modification of a terminal is expected from a judgment |
Dropping individual part | Three times from height of 100 cm | |
High temperature, high humidity storage ability | Leave for 500 hours at 85°C and 85% RH (no condensing) | |
High temperature storage ability | Leave for 500 hours at 85°C | |
Low temperature storage ability | Leave for 500 hours at –25°C (no freezing) | |
Shock and heat resistance | Subject to 100 cycles each consisting of 30 minutes at –25°C and 30 minutes at 85°C. | |
Resistance to hydrogen sulfide | Leave for 500 hours in an atmosphere containing 3 ppm of hydrogen sulfide at 40°C and 75% RH. | |
Resistance to sulfur dioxide gas | Leave for 500 hours in an atmosphere containing 10 ppm of sulfur dioxide at 40°C and 95% RH | |
Resistance to ammonia gas | Leave for 96 hours in an atmosphere containing 3% of ammonia gas at normal temperature and humidity. | |
Resistance to dust | Mix with 2 kg/m3 talcum powder or fly ash and leave to stand for 8 hours | |
Ambient temperature | –20 to +80°C (no freezing and condensing) | |
Unit weight | Approx. 1 g | |
Protection grade | IP40 |
*1 | Without any indications, specifications are measured at following conditions Temperature: 15 to 35°C, Humidity: 25 to 85% RH, Atmospheric pressure: 86 to 106 kpa. | ||||||
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*2 | The evaluation criteria for performance are as follows: Basic characteristics - Ta = 25°C and applicable circuit conditions
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SPST-NC (The photo transistor is ON when the sensor is being used.)
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