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Business > Industrial Devices > Automation Controls Top > FA Sensors & Components > Sensors > Photoelectric Sensors / Laser Sensors > Wafer Mapping Sensor M-DW1(Discontinued Products) > Specifications

Wafer Mapping Sensor M-DW1 (Discontinued Products)

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We are sorry, the products have been discontinued. Please refer to the details of the discontinued products and the recommended substitutes list below.

	June 30, 2023

Discontinued Products
Information

Specifications

Dimensions

Circuit/ Wiring

Cautions For Use

Specifications

Type		LED beam reflective type
Model No.		M-DW1
CE marking directive compliance		EMC Directive, RoHS Directive
Center sensing distance		45 mm 1.772 in
Sensing object		3 inch or larger semiconductor wafer (Note 2)
Detectable surface		Surface having a side edge which reflects light in the light receiving direction (Note 3)
Sensing angle		12.5 ± 5° (Note 4)
Wafer pitch		Separate sensing is possible at normal sensitivity for 3 mm 0.118 in pitch or more (Note 5)
Suitable cassette		SEMI standard FOUP cassette / open cassette
Supply voltage		12 to 24 V DC ± 10 % Ripple P-P 10 % or less
Current consumption		65 mA or less
Output		NPN output / PNP output, selectable with output selection switch <NPN output> NPN open-collector transistor - Maximum sink current: 100 mA - Applied voltage: 30 V DC or less (between output and 0 V) - Residual voltage: 1 V or less (at 100 mA sink current) 0.4 V or less (at 16 mA sink current) <PNP output> PNP open-collector transistor - Maximum source current: 100 mA - Applied voltage: 30 V DC or less (between output and +V) - Residual voltage: 1 V or less (at 100 mA source current) 0.4 V or less (at 16 mA source current)
	Utilization category	DC-12 or DC-13
	Output operation	Light-ON / Dark-ON, selectable by switch
	Short-circuit protection	Incorporated (restored automatically)
Response time		500 μs or less
Operation indicator		Orange LED (lights up when the output is ON)
Stability indicator		Green LED (lights up under stable light received condition or stable dark condition)
Timer function		Approx. 2 ms fixed OFF-delay timer, switchable either effective or ineffective
Test input (emission halt input)		Signal condition - Emission Halt: Open, or 4 to 8 V - Emission: 0 to 3 V, or 9 V to +V (26.4 V max.)
Sensitivity selection input		Signal condition - Input OFF: Open, or 4 to 8 V - Input ON: 0 to 3 V, or 9 V to +V (26.4 V max.)
Sensitivity setting		Back surface teaching: effectuated with sensor's sensitivity setting button Detection sensitivity selection: 4 levels with sensor's 2 bit switch or 2 levels with external input selectable
Pollution degree		3 (Industrial environment)
Ambient temperature		0 to +55 ℃ +32 to +131 ℉ (No dew condensation), Storage: -10 to +70 ℃ +14 to +158 ℉
Ambient humidity		35 to 85 % RH, Storage: 35 to 85 % RH
Ambient illuminance		Incandescent light: 3,000 lx or less at the light-receiving face, Fluorescent light: 1,500 lx or less at the light-receiving face
Voltage withstandability		1,000 V AC for one min. between all supply terminals connected together and enclosure
Insulation resistance		20 MΩ, or more, with 250 V DC megger between all supply terminals connected together and enclosure
Vibration resistance		10 to 500 Hz frequency, 3 mm 0.118 in double amplitude in X, Y and Z directions for two hours each
Shock resistance		98 m/s² acceleration (10 G approx) in X, Y and Z directions five times each
Emitting element		LED (modulated)
Material		Enclosure: ABS and Stainless steel (SUS301), Lens: Acrylic
Cable		0.15 mm² 5-core cabtyre cable, 300 mm 11.811 in long
Cable extension		Extension up to total 10 m 32.808 ft is possible with 0.15 mm², or more, cable.
Weight		Net weight: 75 g approx.

Note 1: Where measurement conditions have not been specified precisely, the conditions used were an ambient temperature of +20 ℃ +68 ℉.

Note 2: In case of 8 inch or less wafers, the wafer pitch, the orientation flat or surface condition may affect the sensing.

Note 3: Polished wafers, etc., which have a sharp edge cannot be detected since they do not reflect the light in the light receiving direction.

Note 4: Since the position of the orientation flat may vary by ±20° due to its rotation.

Note 5: This is the pitch of an 8 inch wafer near its center region when it is inserted in an inclined fashion. When detecting a wafer having an orientation flat, the wafer pitch becomes still smaller when sensing at positions which avoid the orientation flat. In this case, the sensing signal cannot be resolved and it becomes a continuous, broad signal.

Note 1:	Where measurement conditions have not been specified precisely, the conditions used were an ambient temperature of +20 ℃ +68 ℉.
Note 2:	In case of 8 inch or less wafers, the wafer pitch, the orientation flat or surface condition may affect the sensing.
Note 3:	Polished wafers, etc., which have a sharp edge cannot be detected since they do not reflect the light in the light receiving direction.
Note 4:	Since the position of the orientation flat may vary by ±20° due to its rotation.
Note 5:	This is the pitch of an 8 inch wafer near its center region when it is inserted in an inclined fashion. When detecting a wafer having an orientation flat, the wafer pitch becomes still smaller when sensing at positions which avoid the orientation flat. In this case, the sensing signal cannot be resolved and it becomes a continuous, broad signal.