PhotoMOS HE 1 Form A DIP6 (5-pin)
Rating
1.Absolute maximum ratings (Ambient temperature: 25°C)
Item |
Symbol |
AQV258H5 (A) |
Remarks |
Input |
LED forward current |
IF |
50 mA |
|
LED reverse voltage |
VR |
5 V |
|
Peak forward current |
IFP |
1 A |
f = 100 Hz, Duty Ratio = 0.1% |
Power dissipation |
Pin |
75 mW |
|
Output |
Load voltage (peak AC) |
VL |
1,500 V |
|
Continuous load current |
IL |
0.02 A |
Peak AC, DC |
Peak load current |
Ipeak |
0.06 A |
100 ms (1 shot), VL = DC |
Power dissipation |
Pout |
360 mW |
|
Total power dissipation |
PT |
410 mW |
|
I/O isolation voltage |
Viso |
5,000 Vrms |
|
Ambient temperature (Operating) |
Topr |
–40 to +85°C |
(Avoid icing and condensation) |
Ambient temperature (Storage) |
Tstg |
–40 to +100°C |
|
Junction temperature |
Tj |
125°C |
|
2.Electrical characteristics (Ambient temperature: 25°C)
Item |
Symbol |
AQV258H5 (A) |
Condition |
Input |
LED operate current |
Typical |
IFon |
1.4 mA |
IL = Max. |
Maximum |
3.0 mA |
LED turn off current |
Minimum |
IFoff |
0.2 mA |
Typical |
1.3 mA |
LED dropout voltage |
Typical |
VF |
1.32 V (1.16 V at IF = 10 mA) |
IF = 50 mA |
Maximum |
1.5 V |
Output |
On resistance |
Typical |
Ron |
315 Ω |
IF = 10 mA
IL = Max.
Within 1s |
Maximum |
500 Ω |
Off state leakage current |
Maximum |
ILeak |
10 μA |
IF = 0 mA
VL = Max. |
Transfer characteristics |
Turn on time* |
Typical |
Ton |
0.35 ms |
IF = 10 mA
IL = Max. |
Maximum |
1.0 ms |
Turn off time* |
Typical |
Toff |
0.04 ms |
Maximum |
0.2 ms |
I/O capacitance |
Typical |
Ciso |
1.3 pF |
f = 1 MHz
VB = 0V |
Maximum |
3 pF |
Initial I/O isolation resistance |
Minimum |
Riso |
1,000 MΩ |
500 V DC |
3.Recommended operating conditions (Ambient temperature: 25℃)
Please use under recommended operating conditions to obtain expected characteristics.
Item |
Symbol |
Min. |
Max. |
Unit |
LED current |
IF |
5 |
30 |
mA |
AQV258H5 (A) |
AQV258H5 (A)
| VL |
- |
1,200 |
V |
Continuous load current |
IL |
- |
0.02 |
A |
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