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> 放大器內藏・超小型雷射感測器 EX-L200
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> EX-L291-J
EX-L291-J | 放大器內藏・超小型雷射感測器 EX-L200
| 品名 | EX-L291-J |
| 型號 | EX-L291-J |
| 產品 | Amplifier Built-in Ultra-compact Laser Sensor |
| 詳細 | Retroreflective type |
| 產品名稱 | 放大器內藏・超小型雷射感測器 EX-L200 |
截至2024年05月16日
為了改善本產品，會有在未事先通知的情況下變更本產品的規格及設計的情況。
詳細規格
| 項目 | 內容 |
|---|---|
| 品名 | EX-L291-J |
| 型號 | EX-L291-J |
| Regulatory compliance | EMC Directive, RoHS Directive |
| Sensing range | 4 m 13.123 ft (Note)The sensing range is specified for white non-glossy papar (100 x 100 mm 3.937 x 3.937 in) as the object. |
| Emission spot size (Typical) | Approx. 6 × 4 mm 0.236 × 0.157 in (vertical x horizontal) (at a sensing distance of 1 m) (Note) In the case sensing distance is 4 m 13.123 ft, the emission spot size is H 18 x W 10 mm H 0.709 x W 0.394 in (visual reference value). |
| Sensing object | Opaque translucent object of ø25 mm ø0.984 in or more |
| Minimum sensing object (Typical) | - |
| Hysteresis | 20 % or less of operation distance |
| Repeatability | Perpendicular to sensing axis: 0.2 mm 0.0080 in or less |
| Repeatability (Typical)(perpendicular to sensing axis) | - |
| Supply voltage | 12 to 24 V DC plus or minus 10 % Ripple P-P 10 % or less |
| Current consumption | 15 mA or less |
| Output | NPN open-collector transistor - Maximum sink current: 50 mA - Applied voltage: 26.4 V DC or less (between output and 0 V) - Residual voltage: 2 V or less (at 50 mA sink current), 1 V or less (at 16 mA sink current) |
| Output:Output operation | Light-ON / Dark-ON selectable by the output operation switching input |
| Output:Short-circuit protection | Incorporated (short-circuit protection / inverse polarity protection) |
| Response time | 0.5 ms or less |
| Automatic Interference prevention function | Incorporated (Two sensors can be mounted close together.) |
| Sensitivity adjuster | Continuously variable adjuster |
| Protection | IP67 (IEC) |
| Ambient temperature | -10 to +55 ℃ +14 to +131 ℉ (No dew condensation or no icing condition), Storage: -30 to +70 ℃ -22 to +158 ℉ |
| Ambient humidity | 35 to 85 % RH, Storage: 35 to 85 % RH |
| Ambient illuminance | Incandescent light: 3,000 lx or less at the light-receiving face |
| Voltage withstandability | 1,000 V AC for one min. between all supply terminals connected together and enclosure |
| Insulation resistance | 20 MOhm , or more, with 250 V DC megger between all supply terminals connected together and enclosure |
| Vibration resistance | 10 to 500 Hz frequency, 1.5 mm 0.059 in double amplitude (10 G max.) in X, Y and Z directions for two hours each |
| Shock resistance | 500 m/s2 acceleration (50 G approx.) in X, Y and Z directions three times each |
| Emitting element | Red semiconductor laser Class 1 (IEC / JIS/ FDA/ GB) (Note：This product complies with 21 CFR 1040.10 and 1040.11 Laser Notice No. 56, dated May 8, 2019, issued by CDRH (Center for Devices and Radiological Health) under the FDA (Food and Drug Administration) (Maximum output: 0.5 mW, Peak emission wavelength: 655 nm 0.026 mil) |
| Material | Enclosure: Polybutylene terephthalate, Front cover: Acylic, Lens: Glass, Indicator part: Polyarylate |
| Accessory | RF-330 (Reflector): 1 pc. MS-EXL2-3 (Mounting plate): 1 pc. |
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