M-DW1 | 晶圓定位感測器 M-DW1(已停產)


晶圓定位感測器 M-DW1(已停產)

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  • 停止接單
  • 停產時期2023年6月30日
品名 M-DW1
型號 M-DW1
產品 Wafer Mapping Sensor
詳細 LED beam reflective type
產品名稱 晶圓定位感測器 M-DW1(已停產)
  • 代替商品 -
  • 代替品名 -
  • 代替型番 -
  • 備考 非常抱歉,無替代型號。

詳細規格 2023年6月30日的資訊

項目 內容
品名 M-DW1
型號 M-DW1
Center sensing distance 45 mm 1.772 in
Sensing object 3 inch or larger semiconductor wafer
(Note:In case of 8 inch or less wafers, the wafer pitch, the orientation flat or surface condition may affect the sensing.)
Detectable surface Surface having a side edge which reflects light in the light receiving direction
(Note:Polished wafers, etc., which have a sharp edge cannot be detected since they do not reflect the light in the light receiving direction.)
Sensing angle 12.5 ± 5°
(Note:Since the position of the orientation flat may vary by ±20° due to its rotation.)
Wafer pitch Separate sensing is possible at normal sensitivity for 3 mm 0.118 in pitch or more
(Note:This is the pitch of an 8 inch wafer near its center region when it is inserted in an inclined fashion. When detecting a wafer having an orientation flat, the wafer pitch becomes still smaller when sensing at positions which avoid the orientation flat. In this case, the sensing signal cannot be resolved and it becomes a continuous, broad signal.)
Suitable cassette SEMI standard FOUP cassette / open cassette
Supply voltage 12 to 24 V DC ± 10 % Ripple P-P 10 % or less
Current consumption 65 mA or less
Output NPN output / PNP output, selectable with output selection switch

NPN open-collector transistor
- Maximum sink current: 100 mA
- Applied voltage: 30 V DC or less (between output and 0 V)
- Residual voltage: 1 V or less (at 100 mA sink current)
0.4 V or less (at 16 mA sink current)

PNP open-collector transistor
- Maximum source current: 100 mA
- Applied voltage: 30 V DC or less (between output and +V)
- Residual voltage: 1 V or less (at 100 mA source current)
0.4 V or less (at 16 mA source current)
Output:Output operation Light-ON / Dark-ON, selectable by switch
Output:Short-circuit protection Incorporated (restored automatically)
Response time 500 μs or less
Operation indicator Orange LED (lights up when the output is ON)
Stability indicator Green LED (lights up under stable light received condition or stable dark condition)
Timer function Approx. 2 ms fixed OFF-delay timer, switchable either effective or ineffective
Test input (emission halt input) Signal condition
- Emission Halt: Open, or 4 to 8 V
- Emission: 0 to 3 V, or 9 V to +V (26.4 V max.)
Sensitivity selection input Signal condition
- Input OFF: Open, or 4 to 8 V
- Input ON: 0 to 3 V, or 9 V to +V (26.4 V max.)
Sensitivity setting Back surface teaching: effectuated with sensor's sensitivity setting button
Detection sensitivity selection: 4 levels with sensor's 2 bit switch or 2 levels with external input selectable
Ambient temperature 0 to +55 ℃ +32 to +131 ℉ (No dew condensation), Storage: -10 to +70 ℃ +14 to +158 ℉
Ambient humidity 35 to 85 % RH, Storage: 35 to 85 % RH
Ambient illuminance Incandescent light: 3,000 lx or less at the light-receiving face,
Fluorescent light: 1,500 lx or less at the light-receiving face
Voltage withstandability 1,000 V AC for one min. between all supply terminals connected together and enclosure
Insulation resistance 20 MΩ, or more, with 250 V DC megger between all supply terminals connected together and enclosure
Vibration resistance 10 to 500 Hz frequency, 3 mm 0.118 in double amplitude in X, Y and Z directions for two hours each
Shock resistance 98 m/s2 acceleration (10 G approx) in X, Y and Z directions five times each
Emitting element LED (modulated)
Material Enclosure: ABS and Stainless steel (SUS301), Lens: Acrylic
Cable 0.15 mm2 5-core cabtyre cable, 300 mm 11.811 in long
Cable extension Extension up to total 10 m 32.808 ft is possible with 0.15 mm2, or more, cable.
Weight Net weight: 75 g approx.

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