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PhotoMOS Technical Terminology

1. Technical Terminology
2. Reliability tests

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1. Technical Terminology

Term		Symbol	Description
Input	LED forward current	I_F	Current that flows between the input terminals when the input diode is forward biased.
	LED reverse voltage	V_R	Reverse breakdown voltage between the input terminals.
	Peak forward current	I_FP	Maximum instantaneous value of the forward current.
	LED operate current	I_Fon	Current when the output switches on (by increasing the LED current) with a designated supply voltage and load connected between the output terminals.
	LED turn off current	I_Foff	Current when the output switches off (by decreasing the LED current) after operating the device with a designated supply voltage and load connected between the output terminals.
	LED dropout voltage	V_F	Dropout voltage between the input terminals due to forward current.
	Power dissipation	P_in	Allowable power dissipation between the input terminals.
Output	Load voltage	V_L	Supply voltage range at the output used to normally operate the PhotoMOS®. Represents the peak value for AC voltages.
	Continuous load current	I_L	Maximum current value that flows continuously between the output terminals of the PhotoMOS® under designated ambient temperature conditions. Represents the peak value for AC current.
	On resistance	R_on	Obtained using the equation below from dropout voltage V_DS (on) between the output terminals (when a designated LED current is made to flow through the input terminals and the designated load current through the output terminals.) R_on = V_DS (on)/I_L
	Off state leakage current	I_Leak	Current flowing to the output when a designated supply voltage is applied between the output terminals with no LED current flow.
	Power dissipation	P_out	Allowable power dissipation between the output terminals.
	Open-circuit output voltage	V_oc	Voltage required for driving a MOSFET
	Short-circuit current	I_sc	Current that is output from the driver when the input is turned on
Electrical characteristics	Turn on time	T_on	Delay time until the output switches on after a designated LED current is made to flow through the input terminals.
	Turn off time	T_off	Delay time until the output switches off after the designated LED current flowing through the input terminals is cut off.
	I/O capacitance	C_iso	Capacitance between the input and output terminals.
	Output capacitance	C_out	Capacitance between output terminals when LED current does not flow.
	I/O isolation resistance	R_iso	Resistance between terminals (input and output) when a specified voltage is applied between the input and output terminals.
	Total power dissipation	P_T	Allowable power dissipation in the entire circuit between the input and output terminals.
	I/O isolation voltage	V_iso	Critical value before dielectric breakdown occurs, when a high voltage is applied for 1 minute between the same terminals where the I/O isolation resistance is measured.
Ambient temperature	Operating	T_opr	Ambient temperature range in which the PhotoMOS® can operate normally with a designated load current conditions.
Ambient temperature	Storage	T_stg	Ambient temperature range in which the PhotoMOS® can be stored without applying voltage.
Max. operating frequency		—	Max. operating frequency at which a PhotoMOS® can operate normally when applying the specified pulse input to the input terminal

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2. Reliability tests

Classification	Item	Condition	Purpose
Life tests	High temperature storage test	T_stg (Max.)	Determines resistance to long term storage at high temperature.
	Low temperature storage test	T_stg (Min.)	Determines resistance to long term storage at low temperature.
	High temperature and high humidity storage test	85°C, 85% RH	Determines resistance to long term storage at high temperature and high humidity.
	Continuous operation life test	V_L = Max., I_L = Max., I_F = Recommended LED forward current	Determines resistance to electrical stress (voltage and current).
Thermal environment tests	Temperature cycling test	Low storage temperature (T_stg Min.) High storage temperature (T_stg Max.)	Determines resistance to exposure to both low temperatures and high temperatures.
	Thermal shock test	Low temperature (0°C), High temperature (100°C)	Determines resistance to exposure to sudden changes in temperature.
	Solder burning resistance	260±5°C, 10 s	Determines resistance to thermal stress occurring while soldering.
Mechanical environment tests	Vibration test	196 m/s² {20 G}, 100 to 2,000 Hz *1	Determines the resistance to vibration sustained during shipment or operation.
	Shock test	9,800 m/s² {1,000 G} 0.5 ms *2; 4,900 m/s² {500 G} 1 ms	Determines the mechanical and structural resistance to shock.
	Terminal strength test	Determined from terminal shape and cross section	Determines the resistance to external force on the terminals of the PhotoMOS® mounted on the PC board while wiring or operating.
	Solderability	245°C, 3 s (with soldering flux)	Evaluates the solderability of the terminals.

*1 10 to 55 Hz at double amplitude of 3 mm for Power PhotoMOS®.
*2 4,900 m/s², 1 ms for Power PhotoMOS®.

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PhotoMOS Related Information

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Title	Language	File size	Update
PhotoMOSリレー用語説明	JP	142.3KB	April 1, 2022
Terminology PhotoMOS	EN	49.9KB	April 1, 2022
术语说明 PhotoMOS	CN-Simplified	309.2KB	October 10, 2013