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PhotoMOS Technical Terminology

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1. Technical Terminology

Term Symbol Description
Input LED forward current IF Current that flows between the input terminals when the input diode is forward biased.
LED reverse voltage VR Reverse breakdown voltage between the input terminals.
Peak forward current IFP Maximum instantaneous value of the forward current.
LED operate current IFon Current when the output switches on (by increasing the LED current) with a designated supply voltage and load connected between the output terminals.
LED turn off current IFoff Current when the output switches off (by decreasing the LED current) after operating the device with a designated supply voltage and load connected between the output terminals.
LED dropout voltage VF Dropout voltage between the input terminals due to forward current.
Power dissipation Pin Allowable power dissipation between the input terminals.
Output Load voltage VL Supply voltage range at the output used to normally operate the PhotoMOS®.
Represents the peak value for AC voltages.
Continuous load current IL Maximum current value that flows continuously between the output terminals of the PhotoMOS® under designated ambient temperature conditions. Represents the peak value for AC current.
On resistance Ron Obtained using the equation below from dropout voltage VDS (on) between the output terminals (when a designated LED current is made to flow through the input terminals and the designated load current through the output terminals.)
Ron = VDS (on)/IL
Off state leakage current ILeak Current flowing to the output when a designated supply voltage is applied between the output terminals with no LED current flow.
Power dissipation Pout Allowable power dissipation between the output terminals.
Open-circuit output voltage Voc Voltage required for driving a MOSFET
Short-circuit current Isc Current that is output from the driver when the input is turned on
Electrical
characteristics
Turn on time Ton Delay time until the output switches on after a designated LED current is made to flow through the input terminals.
Turn off time Toff Delay time until the output switches off after the designated LED current flowing through the input terminals is cut off.
I/O capacitance Ciso Capacitance between the input and output terminals.
Output capacitance Cout Capacitance between output terminals when LED current does not flow.
I/O isolation resistance Riso Resistance between terminals (input and output) when a specified voltage is applied between the input and output terminals.
Total power dissipation PT Allowable power dissipation in the entire circuit between the input and output terminals.
I/O isolation voltage Viso Critical value before dielectric breakdown occurs, when a high voltage is applied for 1 minute between the same terminals where the I/O isolation resistance is measured.
Ambient
temperature
Operating Topr Ambient temperature range in which the PhotoMOS® can operate normally with a designated load current conditions.
Storage Tstg Ambient temperature range in which the PhotoMOS® can be stored without applying voltage.
Max. operating frequency Max. operating frequency at which a PhotoMOS® can operate normally when applying the specified pulse input to the input terminal

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2. Reliability tests

Classification Item Condition Purpose
Life tests High temperature storage test Tstg (Max.) Determines resistance to long term storage at high temperature.
Low temperature storage test Tstg (Min.) Determines resistance to long term storage at low temperature.
High temperature and high humidity storage test 85°C 185°F, 85%R.H. Determines resistance to long term storage at high temperature and high humidity.
Continuous operation life test VL = Max., IL = Max.,
IF = Recommended LED forward current
Determines resistance to electrical stress (voltage and current).
Thermal
environment
tests
Temperature cycling test Low storage temperature (Tstg Min.)
High storage temperature (Tstg Max.)
Determines resistance to exposure to both low temperatures and high temperatures.
Thermal shock test Low temperature (0°C) (32°F),
High temperature (100°C) (212°F)
Determines resistance to exposure to sudden changes in temperature.
Solder burning resistance 260±5°C 500±41°F, 10 s Determines resistance to thermal stress occurring while soldering.
Mechanical
environment
tests
Vibration test 196 m/s2 {20 G}, 100 to 2,000 Hz*1 Determines the resistance to vibration sustained during shipment or operation.
Shock test 9,800 m/s2 {1,000 G} 0.5 ms*2;
4,900 m/s2 {500 G} 1 ms
Determines the mechanical and structural resistance to shock.
Terminal strength test Determined from terminal shape and cross section Determines the resistance to external force on the terminals of the PhotoMOS® mounted on the PC board while wiring or operating.
Solderability 245°C 473°F 3 s (with soldering flux) Evaluates the solderability of the terminals.

*1 10 to 55 Hz at double amplitude of 3 mm for Power PhotoMOS®.
*2 4,900 m/s2, 1 ms for Power PhotoMOS®.

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