8 GHz max. capable, 150 W carrying power ( at 2 GHz ), compact SMD type, 50 Ω impedance and 1 Form C relays
Protective construction: Flux-resistant type
Please refer to "the latest product specifications" when designing your product.
Please refer to "Cautions For Use" in the catalog, and "Related Information" on our website.
Features
1.Excellent high frequency characteristics (50 Ω, up to 8 GHz)
2.Compact size: 9.6 (W) x 14.6 (L) x 10 (H) mm
3.2 GHz, 150 W carrying power possible
Typical Applications
1.Measuring equipment
2.Base stations market
3.High-frequency amp switching in wireless devices, etc.
Note: If you consider using applications with low level loads or with high frequency switching, please consult us.
High Frequency Characteristics
50 Ω (Initial)
Frequency |
Up to 1 GHz |
1 to 2 GHz |
2 to 3 GHz |
3 to 6 GHz |
V.S.W.R. (Max.) |
1.1 |
1.15 |
1.2 |
1.3 |
Insertion loss (dB, Max.) |
0.1 |
0.12 |
0.15 |
0.5 |
Isolation (dB, Min.) |
60 |
55 |
45 |
30 |
Reference Data
1. High frequency characteristics
Sample: ARN10A12
Measuring method: See "Measuring method" under "NOTES".
2. Contact input power
Max. 150 W (whith heat sink)
(at 2 GHz, Impedance 50 Ω, V.S.W.R. Max. 1.15, at 20°C)
Max. 100 W (whithout heat sink)
(at 2 GHz, Impedance 50 Ω, V.S.W.R. Max. 1.15, at 20°C)
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